Efficiency comparison between Fujitsu semiconductors GaN power dewice and conventional Si-based power device.
GaN / SiC with excellent characteristics - History of Semiconductors - From germanium to silicon.Fujitsu Semiconductor aims to start volume production of the GaN power devices in the second half of 2013.The origin of Sanken Electric's GaN power devices trace to the blue LED Si substrate technology.GaN device has the advantage in compact, high frequency applications, such as in switching power supply.Nedo: New Energy and Industrial Technology Development Organization. .Today, forming a GaN active layer on ideas para envolver regalos de bebe silicon substrate has become the standard.These results have enabled Fujitsu Semiconductor, in a test circuit using a GaN power device, to succeed in achieving conversion efficiency that exceeds the performance of conventional silicon devices.In Development ctcb-310K2 TO3P.5 Charger for EV, etc In Development ctcb-320K2 TO3P.5 Charger for EV, etc In Development SiC-mosfet Part.Comparing the material properties, the figure of merit (eEc3) of SiC is 440 times greater, and GaN is 1130 times than that of Silicon.Fujitsu Semiconductor announced that it successfully achieved high output power.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate.Therefore, although GaN does not have as much ability to withstand high breakdown voltage when compared to SiC, it is suited for compact, high frequency applications.Available fmca-22065 TO-220F 650.5 Air conditioner, Refrigerator, High-performance server, etc.Recently, in a collaborative effort together with Fujitsu Laboratories Limited, Fujitsu Semiconductor has been engaging in technical development initiatives, such as developing a process technology for growing high quality GaN crystals on a silicon substrate, developing device technologies, such as optimizing the design of electrodes.
Fujitsu Semiconductor also prototyped a power supply unit for servers equipped with a GaN power device for the power factor correction circuit and successfully achieved output power.5kW.IF(A vF(V application, status, fMCA-11065, tO-220F 650.5, air conditioner, Refrigerator, High-performance server, etc.High voltage, high current switch evaluation is possible by inputting a logic signal with a microcomputer, etc Board Number vdss(V) ID(A) Element Configuration, etc QFN8-HB2-1S FR4.6mm 2 layers Cu Thickness 70um.35mm.5mm dibujo corazon de regalo QFN8-HB2-1D.Trench structure SiC-mosfet currently in development.Sanken was the first in the industry to develop InGaN on Silicon LED (Patented by Sanken Electric, a gallium nitride compound mixed with indium on a silicon substrate.The Future- Next Generation Power Semiconductors GaN SiC, in recent years, GaN (gallium nitride) and SiC (silicon Carbide) based semiconductors called the "Next Generation Power Semiconductors"have been receiving much attention.Compared to silicon, GaN and SiC have a wider band gap (Si:1.1, SiC:3.3, GaN:3.4 and therefore it is also called "Wide Band Gap Semiconductors".Output of power supply unit for servers with Fujitsu Semiconductors GaN power device.Fujitsu Semiconductor views its success in these results as opening a path to high-voltage, large-current applications for its GaN power devices.
Compared to conventional silicon-based power devices, GaN-based power devices feature characteristics such as lower on-resistance and the ability to perform high-frequency operations.
GaN Power Device Prototype (TO247 Package).
This has contributed to making a low cost blue LEDs possible.
Features, improve efficiency of the power supply with low recovery loss characteristic of SiC-SBD.